 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PZT2907 / PZT2907A PZT2907 / PZT2907A PNP Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren fur die Oberflachenmontage Power dissipation Verlustleistung Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 3.50.2 PNP 1.3 W SOT-223 0.04 g Version 2006-05-09 6.50.2 30.1 4 1.65 Type Code 1 0.7 2.3 2 3.25 3 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-volt. - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E open B open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS 7 0.3 Grenzwerte (TA = 25C) PZT2907 40 V 60 V 5V 1.3 W 1) 600 mA -55...+150C -55...+150C PZT2907A 60 V 60 V Characteristics (Tj = 25C) Min. Collector-cutoff current - Kollektor-Reststrom IE = 0, - VCB = 50 V IE = 0, - VCB = 50 V, Tj = 150C Emitter-cutoff current - Emitter-Reststrom IC = 0, - VEB = 3 V Collector saturation voltage - Kollektor-Sattigungsspannung ) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Base saturation voltage - Basis-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA PZT2907 PZT2907A - VBEsat - VBEsat - - - VCEsat - VCEsat - - 2 Kennwerte (Tj = 25C) Typ. - - - - -- - Max. 20 nA 10 nA 20 A 10 A 10 nA 0.4 V 1.6 V PZT2907 PZT2907A PZT2907 PZT2907A - ICBO - ICBO - ICBO - ICBO - IEBO - - - - - 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 PZT2907 / PZT2907A Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis - IC = 0.1 mA, - VCE = 10 V - IC = 1 mA, - VCE = 10 V PZT2907 PZT2907A PZT2907 PZT2907A PZT2907 PZT2907A PZT2907 PZT2907A PZT2907 PZT2907A hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE fT CCBO CEBO td tr ts tf RthA RthS 35 75 50 100 75 100 100 100 30 50 200 MHz - - - - - - - - - - - - - - - - - - - - - - - < 93 K/W 1) < 27 K/W PZT2222, PZT2222A - - - - - - 300 300 - - - 8 pF 30 pf 10 40 80 30 Kennwerte (Tj = 25C) Typ. Max. - IC = 10 mA, - VCE = 10 V - IC = 150 mA, - VCE = 10 V - IC = 500 mA, - VCE = 10 V Gain-Bandwidth Product - Transitfrequenz - IC = 20 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten delay time rise time storage time fall time - VCC = 30 V, - IC = 150 mA, - IB1 = 15 mA - VCC = 6 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Thermal resistance junction to soldering point Warmewiderstand Sperrschicht - Lotpad Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
Price & Availability of PZT2907
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |